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  wed3dg6435v-d1 -jd1 1 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs july 2005 rev. 5 256mb C 32mx64 sdram unbuffered  pc100 and pc133 compatible  burst mode operation  auto and self refresh capability  lvttl compatible inputs and outputs  serial presence detect with eeprom  fully synchronous: all signals are registered on the positive edge of the system clock  programmable burst lengths: 1, 2, 4, 8 or full page  3.3v 0.3v power supply  144 pin so-dimm jedec ? package height option: jd1: 31.75mm (1.25) the wed3dg6435v is a 32mx64 synchronous dram module which consists of eight 32mx8 sdram components in tsop ii package, and one 2kb eeprom in an 8 pin tsop package for serial presence detect which are mounted on a 144 pin so-dimm multilayer fr4 substrate. * this product is subject to change without notice. note: consult factory for availability of: ? rohs compliant products ? vendor source control options ? industrial temperature option description features a0 C a12 address input (multiplexed) ba0-1 select bank dq0-63 data input/output ck0, ck1 clock input cke0 clock enable input cs0 chip select input ras# row address strobe cas# column address strobe we# write enable dqmb0-7 dqm v cc power supply (3.3v) v ss ground sda serial data i/o scl serial clock dnu do not use nc no connect pin names ** these pins should be nc in the system which does not support spd. pin configurations (front side/back side) pinout pin front pin back pin front pin back pin back pin back 1v ss 2v ss 49 dq13 50 dq45 97 dq22 98 dq54 3 dq0 4 dq32 51 dq14 52 dq46 99 dq23 100 dq55 5 dq1 6 dq33 53 dq15 54 dq47 101 v cc 102 v cc 7 dq2 8 dq34 55 v ss 56 v ss 103 a6 104 a7 9 dq3 10 dq35 57 nc 58 nc 105 a8 106 ba0 11 v cc 12 v cc 59 nc 60 nc 107 v ss 108 v ss 13 dq4 14 dq36 61 ck0 62 cke0 109 a9 110 ba1 15 dq5 16 dq37 63 v cc 64 v cc 111 a10 112 a11 17 dq6 18 dq38 65 ras# 66 cas# 113 v cc 114 v cc 19 dq7 20 dq39 67 we# 68 nc 115 dqmb2 116 dqmb6 21 v ss 22 v ss 69 cs0# 70 a12 117 dqmb3 118 dqmb7 23 dqmb0 24 dqmb4 71 nc 72 nc 119 v ss 120 v ss 25 dqmb1 26 dqmb5 73 nc 74 ck1 121 dq24 122 dq56 27 v cc 28 v cc 75 v ss 76 v ss 123 dq25 124 dq57 29 a0 30 a3 77 nc 78 nc 125 dq26 126 dq58 31 a1 32 a4 79 nc 80 nc 127 dq27 128 dq59 33 a2 34 a5 81 v cc 82 v cc 129 v cc 130 v cc 35 v ss 36 v ss 83 dq16 84 dq48 131 dq28 132 dq60 37 dq8 38 dq40 85 dq17 86 dq49 133 dq29 134 dq61 39 dq9 40 dq41 87 dq18 88 dq50 135 dq30 136 dq62 41 dq10 42 dq42 89 dq19 90 dq51 137 dq31 138 dq63 43 dq11 44 dq43 91 v ss 92 v ss 139 v ss 140 v ss 45 v cc 46 v cc 93 dq20 94 dq52 141 sda 142 scl 47 dq12 48 dq44 95 dq21 96 dq53 143 v cc 144 v cc
wed3dg6435v-d1 -jd1 2 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs july 2005 rev. 5 functional block diagram dqmb0 we# dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 s0# dqm we# dq15 dq14 dq13 dq12 dq11 dq10 dq9 dq8 we# dqm s0# dq31 dq30 dq29 dq28 dq27 dq26 dq25 dq24 dq23 dq22 dq21 dq20 dq19 dq18 dq17 dq16 we# dqm s0# we# dqm s0# dq62 dq63 dq61 dq60 dq59 dq58 dq57 dq56 dq47 dq51 dq55 dq54 dq53 dq52 dq49 dq50 dq48 dq43 dq45 dq46 dq44 dq41 dq42 dq40 dq39 dq37 dq38 dq35 dq36 dq33 dq34 dq32 we# we# dqm s0# dqm s0# we# s0# dqm we# dqm s0# s0# dqmb1 dqmb2 dqmb3 dqmb7 dqmb6 dqmb5 dqmb4 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 note: dq writing may differ than described in this drawing, however dq/dqmb/cke/s relationships must be maintained as shown. v ss v cc a0 scl sda a2 a1 serial pd sdram sdram *clock wiring clock input sdrams *ck0 *ck1 4 - sdrams 4 - sdrams *wire per clock loading table/wiring diagrams cas# ras# cke0 cke0: sdram cas#: sdram ras#: sdram a0-a12: sdram a0-a12 ba0-ba1 ba0-ba1: sdram note: all resister values are 10? unless otherwise speci? ed.
wed3dg6435v-d1 -jd1 3 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs july 2005 rev. 5 absolute maximum ratings parameter symbol value units voltage on any pin relative to v ss v in , v out -1.0 ~ 4.6 v voltage on v cc supply relative to v ss v cc , v ccq -1.0 ~ 4.6 v storage temperature t stg -55 ~ +150 c power dissipation p d 9 w short circuit current i os 50 ma note: permanent device damage may occur if absolute maximum ratings are exceeded. functional operation should be restricted to recommended operating condition. exposure to higher than recommended voltage for extended periods of time could affect device reliability. parameter symbol min typ max unit note supply voltage v cc 3.0 3.3 3.6 v input high voltage v ih 2.0 3.0 v ccq+0.3 v1 input low voltage v il -0.3 0.8 v 2 output high voltage v oh 2.4 v i oh = -2ma output low voltage v ol 0.4vi ol = -2ma input leakage current i li -10 10 a 3 note: 1. v ih (max)= 5.6v ac. the overshoot voltage duration is 3ns. 2. v il (min)= -2.0v ac. the undershoot voltage duration is 3ns. 3. any input 0v v in v ccq input leakage currents include hi-z output leakage for all bi-directional buffers with tri-state outputs. capacitance t a = 25c, f = 1mhz, v cc = 3.3v, v ref = 1.4v 200mv parameter symbol max unit input capacitance (a0-a12) c in1 36 pf input capacitance (ras#,cas#,we#) c in2 36 pf input capacitance (cke0) c in3 36 pf input capacitance (ck0) c in4 16 pf input capacitance (cs0#) c in5 36 pf input capacitance (dqm0-dqm7) c in6 7pf input capacitance (ba0-ba1) c in7 36 pf data input/output capacitance (dq0-dq63) c out 10 pf recommended dc operating conditions voltage referenced to: v ss = 0v, t a = 0c to +70c
wed3dg6435v-d1 -jd1 4 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs july 2005 rev. 5 operating current characteristics v cc = 3.3v, t a = 0c to +70c version parameter symbol conditions 100/133 units note operating current (one bank active) i cc1 burst length = 1 t rc t rc (min) i ol = 0ma 1080 ma 1 precharge standby current in power down mode i cc2p cke v il (max), t cc = 10ns 16 ma active standby current in non-power down mode i cc3n cke v ih (min), cs v ih (min), tcc = 10ns input signals are changed one time during 20ns 360 ma operating current (burst mode) i cc4 io = ma page burst 4 banks activated t ccd = 2ck 1,200 ma 1 refresh current i cc5 t rc t rc (min) 2,280 ma 2 self refresh current i cc6 cke 0.2v 24 ma notes: 1. measured with outputs open. 2. refresh period is 64ms.
wed3dg6435v-d1 -jd1 5 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs july 2005 rev. 5 ac timing parameters symbol parameter speed grade 100mhz speed grade 133mhz units notes min max min max t ck clock period 10 7.5 ns t ch clock high time rated @1.5v 3 2.5 ns t cl clock low time 3 2.5 ns t is input setup times address/ command & cke 2 1.5 ns data 2 1.5 ns t ih input hold times address/command & cke 1 0.8 ns data 1 0.8 ns t ac output valid from clock cas# latency = 2 or 3, lvttl levels, rated @ 50 pf all outputs switching 6.0 (tco = 5.2) 5.4 (tco = 4.6) ns 1 t oh output hold from clock rated @ 50 pf (1.8 ns @ 0 pf) 3 2.7 ns t ohz output valid to z 3 9 2.7 7 ns t ccd cas to cas delay 1 1 t ck t cbd cas bank delay 1 1 t ck t cke cke to clock disable 1 1 t ck t rp ras precharge time 20 20 ns t ras ras active time 50 45 ns t rcd activate to command delay (ras to cas delay) 20 20 ns t rrd ras to ras bank activate delay 20 15 ns t rc ras cycle time 70 67.5 ns t dqd dqm to input data delay 0 0 t ck t dwd write cmd. to input data delay 0 0 t ck t mrd mode register set to active delay 3 3 t ck t roh precharge to o/p in high z cl cl t ck 2 t dqz dqm to data in high z for read 2 2 t ck t dqm dqm to data mask for write 0 0 t ck 3 t dpl data-in to pre command period 20 15 ns t dal data-in to act (pre) command period (auto precharge) 5 5 t ck t sb power down mode entry 1 1 t ck t srx self refresh exit time 10 10 ns 4 t pde power down exit set up time 1 1 t ck 5 t ckstp clock stop during self refresh or power down 200 200 t ck 6 t ref refresh period 64 64 ms t rfc row refresh cycle time 80.0 75.0 ns 1. access times to be measured w/input signals of 1 v/ns edge rate, 0.8 v to 2.0 v, tco is clock to output with no load. 2. cl = cas latency 3. data masked on the same clock 4. self refresh exit is asynchronous, requiring 10 ns to ensure initiation. self refresh exit is complete in 10 ns + trc. 5. timing is asynchronous. if tis is not met by rising edge of ck then cke is assumed latched on next cycle. 6. if the clock is stopped during self refresh or power down, 200 clocks are required before cke is high.
wed3dg6435v-d1 -jd1 6 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs july 2005 rev. 5 ordering information for d1 ordering information speed cas latency height* wed3dg6435v10d1 100mhz cl=2 31.75 (1.250) wed3dg6435v7d1 133mhz cl=2 31.75 (1.250) wed3dg6435v75d1 133mhz cl=3 31.75 (1.250) notes: ? consult factory for availability of rohs compliant products. (g = rohs compliant) ? vendor speci? c part numbers are used to provide memory components source control. the place holder for this is shown as lo wer case x in the part numbers above and is to be replaced with the respective vendors code. consult factory for quali? ed sourcing options. (m = micron, s = samsung & consul t factory for others) ? consult factory for availability of industrial temperature (-40c to 85c) option ordering information for jd1 ordering information speed cas latency height* wed3dg6435v10jd1 100mhz cl=2 31.75 (1.250) wed3dg6435v7jd1 133mhz cl=2 31.75 (1.250) WED3DG6435V75JD1 133mhz cl=3 31.75 (1.250) notes: ? consult factory for availability of rohs compliant products. (g = rohs compliant) ? vendor speci? c part numbers are used to provide memory components source control. the place holder for this is shown as lo wer case x in the part numbers above and is to be replaced with the respective vendors code. consult factory for quali? ed sourcing options. (m = micron, s = samsung & consul t factory for others) ? consult factory for availability of industrial temperature (-40c to 85c) option 3.99 (0.157) 2.01 (0.079 min) 67.72 (2.661 max) 32.79 (1.291) 4.60 (0.181) 1.50 (0.059) 28.2 (1.112) 23.14 (0.913) 19.99 (0.787) 31.75 (1.250) max 3.81 (0.150) max. 0.99 (0.039) ( 0.004) package dimensions for d1 and jd1 * all dimensions are in millimeters and (inches).
wed3dg6435v-d1 -jd1 7 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs july 2005 rev. 5 document title 256mb C 32mx64 sdram unbuffered revision history rev # history release date status rev 0 created data sheet 6-4-03 advanced rev 1 1.1 updated data sheet 3-3-04 preliminary rev 2 2.1 removed ad1 package option 2.2 added jd1 package option 9-04 preliminary rev 3 3.1 added timing parameters 3.2 moved from preliminary to final 3.3 added d1 package option not recommended for new designs 9-04 final rev 4 4.1 added rohs compliant noti? cation 4.2 indicated vendor source options 4.3 added industrial temperature option 7-05 final rev 5 5.1 added ed to part number 7-05 final


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